<?xml version="1.0" encoding="UTF-8"?>
<Workbook xmlns="urn:schemas-microsoft-com:office:spreadsheet" xmlns:o="urn:schemas-microsoft-com:office:office" xmlns:x="urn:schemas-microsoft-com:office:excel" xmlns:ss="urn:schemas-microsoft-com:office:spreadsheet" xmlns:html="http://www.w3.org/TR/REC-html40">
  <Styles>
    <Style ss:ID="Default" ss:Name="Normal">
      <Alignment ss:Vertical="Bottom"/>
      <Borders/>
      <Font/>
      <Interior/>
      <NumberFormat/>
      <Protection/>
    </Style>
    <Style ss:ID="s24">
      <Alignment ss:Horizontal="Center" ss:Vertical="Bottom"/>
      <Borders>
        <Border ss:Position="Bottom" ss:LineStyle="Continuous" ss:Weight="1"/>
        <Border ss:Position="Left" ss:LineStyle="Continuous" ss:Weight="1"/>
        <Border ss:Position="Right" ss:LineStyle="Continuous" ss:Weight="1"/>
        <Border ss:Position="Top" ss:LineStyle="Continuous" ss:Weight="1"/>
      </Borders>
      <Font x:Family="Swiss" ss:Bold="1"/>
      <Interior ss:Color="#C0C0C0" ss:Pattern="Solid"/>
      <NumberFormat/>
      <Protection/>
    </Style>
    <Style ss:ID="s25">
      <Borders>
        <Border ss:Position="Bottom" ss:LineStyle="Continuous" ss:Weight="1"/>
        <Border ss:Position="Left" ss:LineStyle="Continuous" ss:Weight="1"/>
        <Border ss:Position="Right" ss:LineStyle="Continuous" ss:Weight="1"/>
        <Border ss:Position="Top" ss:LineStyle="Continuous" ss:Weight="1"/>
      </Borders>
    </Style>
  </Styles>
  <Worksheet ss:Name="Publication List">
    <Table>
      <Column ss:StyleID="s25" ss:AutoFitWidth="0" ss:Width="122.25"/>
      <Column ss:StyleID="s25" ss:AutoFitWidth="0" ss:Width="96.75"/>
      <Column ss:StyleID="s25" ss:AutoFitWidth="0" ss:Width="392.25"/>
      <Column ss:StyleID="s25" ss:AutoFitWidth="0" ss:Width="292.25"/>
      <Row>
        <Cell ss:StyleID="s24">
          <Data ss:Type="String">Reference</Data>
        </Cell>
        <Cell ss:StyleID="s24">
          <Data ss:Type="String">Date</Data>
        </Cell>
        <Cell ss:StyleID="s24">
          <Data ss:Type="String">Title</Data>
        </Cell>
        <Cell ss:StyleID="s24">
          <Data ss:Type="String">Language</Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-13:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-16</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-14:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-10-17</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 14: Robustness of terminations (lead integrity)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-33:2004</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2004-04-16</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 33: Accelerated moisture resistance - Unbiased autoclave</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-15:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-04-17</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-3:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-13</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-11:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-16</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 11: Rapid change of temperature - Two-fluid-bath method</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">CECC 265 001:1998</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">1998-09-03</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Technology Approval Schedule: Film and hybrid integrated circuits</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-23:2004</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2004-04-16</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-24:2004</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2004-04-16</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-34:2004</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2004-04-16</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-30:2005</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2005-03-01</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62047-3:2006</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2006-09-20</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-39:2006</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2006-08-25</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-35:2006</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2006-09-20</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 35: Acoustic microscopy for plastic encapsulated electronic components</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62373:2006</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2006-08-10</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62374:2007</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2007-10-19</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-37:2008</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2008-04-11</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62047-1:2006</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2006-06-16</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-27:2006</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2006-08-25</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-26:2006</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2006-08-25</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-6:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-13</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-2:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-13</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-7:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-14</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-4:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-13</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-1:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-06-20</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 1: General</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-9:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-14</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 9: Permanence of marking</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-10:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-14</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-12:2002</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2002-08-16</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-5:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-03-13</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-21:2005</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2005-02-15</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-29:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-12-15</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-25:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-09-18</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-8:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-06-20</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-22:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-06-20</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-31:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-06-20</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 31: Flammability of plastic-encapsulated devices (internally induced)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-32:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-06-20</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 32: Flammability of plastic-encapsulated devices (externally induced)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-36:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-04-17</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-18:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-02-07</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-19:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-04-17</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-17:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-04-17</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 165000-5:1997</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">1997-12-15</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Film and hybrid integrated circuits - Part 5: Procedure for qualification approval</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">CLC/TR 62258-4:2007</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2007-10-05</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor die products - Part 4: Questionnaire for die users and suppliers</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62047-4:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-10-15</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62047-2:2006</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2006-09-20</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-38:2008</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2008-05-15</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">CLC/TR 62258-7:2007</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2007-10-05</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor die products - Part 7: XML schema for data exchange</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62415:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-06-04</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Constant current electromigration test</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62416:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-06-04</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Hot carrier test on MOS transistors</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62417:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-05-07</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62258-1:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-10-15</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor die products - Part 1: Procurement and use</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62374-1:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-11-19</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-20:2009</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2009-11-26</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-20-1:2009</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2009-06-05</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">CLC/TR 62258-8:2008</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2008-08-22</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor die products - Part 8: EXPRESS model schema for data exchange</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-15:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-12-10</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62418:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-07-09</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Metallization stress void test</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">CLC/TR 62258-4:2013</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2013-01-11</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor die products - Part 4: Questionnaire for die users and suppliers</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-40:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-09-02</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 40: Board level drop test method using a strain gauge</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62258-2:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-07-08</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor die products - Part 2: Exchange data formats</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-21:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-08-19</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-29:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-08-19</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-34:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-12-10</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-19:2003/A1:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-09-03</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-23:2004/A1:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-03-04</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-32:2003/A1:2010</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2010-09-03</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 32: Flammability of plastic-encapsulated devices (externally induced)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-30:2005/A1:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-07-08</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-7:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-09-09</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-27:2006/A1:2012</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2012-11-09</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 62374-1:2010/AC:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-04-01</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-15:2010/AC:2011</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2011-02-04</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
      <Row>
        <Cell>
          <Data ss:Type="String">EN 60749-16:2003</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">2003-04-03</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND)</Data>
        </Cell>
        <Cell>
          <Data ss:Type="String">   </Data>
        </Cell>
      </Row>
    </Table>
  </Worksheet>
</Workbook>
